Strained layer Inx Ga1-x As/GaAs and InxGa1-x As/InyGA1-y P multiple-quantum-well optical modulators grown by gas-source MBE

被引：0
|
作者：
Kim, J.W. [1 ]
Chen, C.W. [1 ]
Vogt, T.J. [1 ]
Woods, L.M. [1 ]
Robinson, G.Y. [1 ]
Lile, D.L. [1 ]
机构：
[1] Colorado State Univ, Fort Collins, United States
来源：
IEEE Photonics Technology Letters | 1993年 / 5卷 / 09期
关键词：
Crystal growth - Molecular beam epitaxy - Quantum electronics - Semiconducting gallium compounds - Semiconductor quantum wells;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The first results on low-power p-i-n diode modulator structures using strained multiple quantum wells (MQW's) of InGaAs/InGaP grown by gas-source molecular beam epitaxy (MBE) on GaAS are presented. A comparison of transmission, reflection, and photocurrent spectra for these nonresonant devices with those fabricated from InGaAs/GaAs indicates larger modulation, with a maximum change in reflection of > 42% observed at 5-V bias at a wavelength of 0.96 μm.
引用
收藏
页码：967 / 989
相关论文
共 39 条
  • [1] STRAINED-LAYER IN1-XAS/GAAS AND INXGA1-XAS/INYGA1-YP MULTIPLE-QUANTUM-WELL OPTICAL MODULATORS GROWN BY GAS-SOURCE MBE
    KIM, JW
    CHEN, CW
    VOGT, TJ
    WOODS, LM
    ROBINSON, GY
    LILE, DL
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (09) : 987 - 989
  • [2] Highly strained InxGa1-xP/GaP quantum wells grown on GaP and on an Inx/2Ga1-x/2P buffer layer by gas-source molecular beam epitaxy
    Bi, WG
    Tu, CW
    JOURNAL OF CRYSTAL GROWTH, 1996, 165 (03) : 210 - 214
  • [3] Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
    Bergman, JP
    Pozina, G
    Monemar, B
    Kamiyama, S
    Iwaya, M
    Amano, H
    Akasaki, I
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1493 - 1496
  • [4] OPTICAL STUDY OF MBE GROWN (INAS)M(GAAS)N SUPERLATTICE ALLOY ON GAAS AND OF INXGA(1-X)AS/INYGA(1-Y)AS STRUCTURES ON INP
    MARZIN, JY
    GOLDSTEIN, L
    GLAS, F
    QUILLEC, M
    SURFACE SCIENCE, 1986, 174 (1-3) : 586 - 591
  • [5] GROWTH OF PSEUDOMORPHIC INXGA1-XAS/GAPYAS1-Y MULTIPLE-QUANTUM-WELL STRUCTURES ON GAAS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    CUNNINGHAM, JE
    GOOSSEN, KW
    JAN, W
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 184 - 188
  • [6] Interband tansition and electronic structures in strained In x Ga1-x N/GaN multiple quantum well
    Kim, D. H.
    Kim, T. W.
    Lee, H. S.
    Lee, J. H.
    Ahn, S. C.
    Yoo, K. H.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (11) : 1668 - 1671
  • [7] STRAINED-LAYER GAAS(1-Y)P(Y)-ALGAAS AND IN(X)GA(1-X)AS-ALGAAS QUANTUM-WELL DIODE-LASERS
    VANDERPOEL, CJ
    AMBROSIUS, HPMM
    LINDERS, RWM
    PEETERS, RML
    ACKET, GA
    KRIJN, MPCM
    APPLIED PHYSICS LETTERS, 1993, 63 (17) : 2312 - 2314
  • [8] Effect of In-segregation on sub bands in Ga1-x′,Inx′,Ny′,As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
    Dixit, V.
    Liu, H. F.
    Xiang, N.
    NUSOD '06: PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2006, : 5 - +
  • [9] LARGE ROOM-TEMPERATURE OPTICAL NONLINEARITY IN GAAS/GA1-X ALXAS MULTIPLE QUANTUM WELL STRUCTURES
    MILLER, DAB
    CHEMLA, DS
    EILENBERGER, DJ
    SMITH, PW
    GOSSARD, AC
    TSANG, WT
    APPLIED PHYSICS LETTERS, 1982, 41 (08) : 679 - 681
  • [10] ION-CHANNELING STUDIES OF INYGA1-YAS/GAAS STRAINED-LAYER SINGLE AND MULTIPLE-QUANTUM-WELL STRUCTURES
    FLEMIG, GW
    BRENN, R
    LARKINS, EC
    BURKNER, S
    BENDER, G
    BAEUMLER, M
    RALSTON, JD
    JOURNAL OF CRYSTAL GROWTH, 1994, 143 (1-2) : 29 - 39
1234