Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation

被引：0

作者：

Ma, Jin ^{[1
]}

Zhang, Dehang ^{[1
]}

Li, Shuying ^{[1
]}

Zhao, Junqing ^{[1
]}

Ma, Honglei ^{[1
]}

机构：

[1] Shandong Univ, Jinan, China

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1998年 / 37卷 / 10期

关键词：

Carrier concentration - Carrier mobility - Deposition - Electric conductivity - Evaporation - Light transmission - Optical films - Plastic films - Polyimides - Semiconducting indium compounds - Semiconductor doping - Transparency;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated. High quality films with resistivity as low as 7×10-4 Ω·cm and transmittance over 80% have been obtained. The temperature dependence of mobility and carrier concentration have been measured over a temperature range 10-400 K. Corresponding scattering mechanism of charge carriers in the films have been discussed.

引用

页码：5614 / 5617

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