Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions

被引:0
|
作者
Disseix, P. [1 ]
Leymarie, J. [1 ]
Vasson, A. [1 ]
Vasson, A.-M. [1 ]
Monier, C. [1 ]
Grandjean, N. [1 ]
Leroux, M. [1 ]
Massies, J. [1 ]
机构
[1] Universite Blaise-Pascal, Clermont-Ferrand II, Aubiere, France
关键词
D O I
暂无
中图分类号
学科分类号
摘要
22
引用
收藏
页码:151 / 154
相关论文
共 50 条
  • [21] MBE Grown GaAs/AlGaAs Multiple Quantum Wells on Ge substrate
    Kumar, Raman
    Kumar, Ravinder
    Panda, Debiprasad
    Tongbram, Binita
    Chakrabarti, Subhananda
    QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XVI, 2019, 10929
  • [22] Exciton dynamics in thin AlGaAs/GaAs quantum wells grown by MBE
    Bugajski, M
    Godlewski, M
    Bergman, JP
    Monemar, B
    Reginski, K
    Kaniewska, M
    THIN SOLID FILMS, 1995, 267 (1-2) : 84 - 88
  • [23] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM-WELLS GROWN BY MBE
    HAYAKAWA, T
    SUYAMA, T
    TAKAHASHI, K
    KONDO, M
    YAMAMOTO, S
    YANO, S
    HIJIKATA, T
    SURFACE SCIENCE, 1986, 174 (1-3) : 76 - 81
  • [24] INPLANE PHOTOCONDUCTIVE PROPERTIES OF MBE-GROWN GAAS/GAALAS MULTIPLE-QUANTUM WELLS
    ARIKAN, MC
    ERGUN, Y
    BALKAN, N
    RIDLEY, BK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1337 - 1346
  • [25] Effects of MOCVD growth conditions on optical and structural properties of GaInNAs/GaAs/InGaAs/GaAs quantum wells
    El-Emawy, ARA
    Cao, HJ
    Nuntawong, N
    Liu, CY
    Osinski, M
    PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 469 - 474
  • [26] InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates
    Е. А. Emel’yanov
    А. P. Kokhanenko
    D. S. Abramkin
    O. P. Pchelyakov
    М. А. Putyato
    B. R. Semyagin
    V. V. Preobrazhenskii
    A. P. Vasilenko
    D. F. Feklin
    Zhicuan Niu
    Haiqiao Ni
    Russian Physics Journal, 2014, 57 : 359 - 363
  • [27] InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates
    Emel'yanov, E. A.
    Kokhanenko, A. P.
    Abramkin, D. S.
    Pchelyakov, O. P.
    Putyato, M. A.
    Semyagin, B. R.
    Preobrazhenskii, V. V.
    Vasilenko, A. P.
    Feklin, D. F.
    Niu, Zhicuan
    Ni, Haiqiao
    RUSSIAN PHYSICS JOURNAL, 2014, 57 (03) : 359 - 363
  • [28] Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE
    Alghamdi, Haifa
    Gordo, Vanessa Orsi
    Schmidbauer, Martin
    Felix, Jorlandio F.
    Alhassan, Sultan
    Alhassni, Amra
    Prando, Gabriela Augusta
    Coelho-Junior, Horacio
    Gunes, Mustafa
    Avanco Galeti, Helder Vinicius
    Gobato, Yara Galvao
    Henini, Mohamed
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (12)
  • [29] Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy
    Luna, E.
    Hey, R.
    Trampert, A.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (02):
  • [30] MBE growth and properties of GaAsSbN/GaAs single quantum wells
    Wu, LJ
    Iyer, S
    Nunna, K
    Li, J
    Bharatan, S
    Collis, W
    Matney, K
    JOURNAL OF CRYSTAL GROWTH, 2005, 279 (3-4) : 293 - 302