Thermally-Induced Changes in Bonding Properties of C60 on Si(100)-2x1 Surfaces

被引：0
|
作者：
机构：
来源：
Isr J Chem | / 1卷 / 55期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Electronic structure of monolayer C-60 on Si(100)2x1 surface
    Yajima, A
    Tsukada, M
    SURFACE SCIENCE, 1996, 357 (1-3) : 355 - 360
  • [42] SCANNING-TUNNELING-MICROSCOPY STUDY OF THE ADSORPTION OF C-60 MOLECULES ON SI(100)-(2X1) SURFACES
    CHEN, D
    GALLAGHER, MJ
    SARID, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 1947 - 1951
  • [43] CHEMISORPTION AND THERMALLY ACTIVATED ETCHING OF SI(100)-2X1 BY IODINE
    RIOUX, D
    STEPNIAK, F
    PECHMAN, RJ
    WEAVER, JH
    PHYSICAL REVIEW B, 1995, 51 (16): : 10981 - 10988
  • [44] ELECTRICAL-PROPERTIES OF HETEROEPITAXIAL GE FILMS ON SI(100)-2X1 SURFACES
    KATAOKA, Y
    HIDA, Y
    UEBA, H
    TATSUYAMA, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03): : 316 - 323
  • [45] The bonding sites and structure of C60 on the Si(100) surface
    Godwin, PD
    Kenny, SD
    Smith, R
    SURFACE SCIENCE, 2003, 529 (1-2) : 237 - 246
  • [46] Direct evidence of C60 chemical bonding on Si(100)
    De Seta, M
    Sanvitto, D
    Evangelisti, F
    PHYSICAL REVIEW B, 1999, 59 (15): : 9878 - 9881
  • [47] PROPERTIES OF POTASSIUM ADSORBED ON SI(100)2X1
    PERVAN, P
    MICHEL, E
    CASTRO, GR
    MIRANDA, R
    WANDELT, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1885 - 1888
  • [48] VIBRATIONAL PROPERTIES OF THE SI(100)2X1 SURFACE
    TIERSTEN, S
    YING, SC
    REINECKE, TL
    PHYSICAL REVIEW B, 1986, 33 (06): : 4062 - 4076
  • [49] Epitaxial silicon overgrowth of C60 on the Si(100)-2 x 1 surface
    Senftleben, Oliver
    Stimpel-Lindner, Tanja
    Eisele, Ignaz
    Baumgaertner, Hermann
    SURFACE SCIENCE, 2008, 602 (02) : 493 - 498
  • [50] Scanning tunneling spectroscopy of C60 adsorbed on Si(100)-(2 x 1)
    Dunn, AW
    Svensson, ED
    Dekker, C
    SURFACE SCIENCE, 2002, 498 (03) : 237 - 243
12345