Characteristics of deep submicron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Ren, H. ^{[1
]}

Hao, Y. ^{[1
]}

Xue, L. ^{[1
]}

机构：

[1] Microelectronics Institute, Xidian University, Xi'an, Shaanxi 710071, China

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 10期

关键词：

Computer simulation - Electric currents - Electric properties - Electron transport properties - Hot carriers - Hydrodynamics - Semiconductor device models - Semiconductor device structures - Surface properties - Temperature;

D O I：

10.1143/jjap.40.5893

中图分类号：

学科分类号：

摘要：

Based on the hydrodynamic energy transport model, the electrical characteristics of grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) are studied and compared with those of corresponding conventional planar PMOSFETs. The simulations reveal that the short-channel effect and drain-induced barrier lowering (DIBL) are absent in grooved-gate PMOSFETs, which have good hot-carrier effect immunity, but the drain current driving capability is lower than that in planar ones. Subsequently, the reasons for these differences between grooved-gate and planar PMOSFETs are analyzed from the viewpoint of interior physical parameter distribution. These parameters include surface potential, electric field, hot-carrier velocity, temperature and so forth.

引用

页码：5893 / 5899

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