PREPARATION OF III-V COMPOUNDS BY REDUCTION OF PRECURSORS.

被引：0
|
作者：
Gallagher, P.K. [1 ]
Robbins, M. [1 ]
Schrey, F. [1 ]
Lambrecht Jr., V.G. [1 ]
Chin, G.Y. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Materials Letters | 1983年 / 2卷 / 01期
关键词：
INORGANIC COMPOUNDS - Reduction - SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING GALLIUM COMPOUNDS - SEMICONDUCTING INDIUM COMPOUNDS;
D O I：
10.1016/0167-577X(83)90025-3
中图分类号：
学科分类号：
摘要：
Compound semiconductors are important in a wide variety of optoelectronic and microwave devices. Stoichiometric polycrystalline InP, GaAs and (InGa)As were prepared by hydrogen reduction of phosphate and arsenate precursors precipitated from aqueous solution. These ill-defined phosphate and arsenate precipitates were dried and heated at elevated temperatures in a stream of pure hydrogen to produce the phosphides and arsenides. It was found necessary to introduce elemental phosphorus or arsenic in a heated region upstream of the reaction to establish the necessary pressure of P or As in the H//2 stream to inhibit the dissociation of the newly formed InP or GaAs.
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页码：27 / 30
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