Differences between the interfaces of InGaAs/GaAs and GaAs/InGaAs in superlattices

被引：0
|
作者：
Natl. Res. Ctr. Optoelectron. T., Institute of Semiconductors, Academia Sinica, Beijing 100083, China [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
Wuli Xuebao | / 9卷 / 1815-1816期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] CARRIER TRAPPING IN ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON INGAAS/GAAS-ON-GAAS SUPERLATTICES
    HUGI, J
    HADDAB, Y
    SACHOT, R
    ILEGEMS, M
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1785 - 1794
  • [32] Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates
    Klimov E.A.
    Pushkarev S.S.
    Klochkov A.N.
    Mozhaeva M.O.
    Russian Microelectronics, 2023, 52 (03) : 129 - 134
  • [33] Formation of cavities in GaAs and InGaAs
    Follstaedt, DM
    Myers, SM
    Barbour, JC
    Petersen, GA
    Reno, JL
    Dawson, LR
    Lee, SR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 160 (04): : 476 - 498
  • [34] Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates
    Momose, H.
    Okai, H.
    Deguchi, H.
    Mori, N.
    Takeyama, S.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 309 - 312
  • [35] Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions
    Rybar, J.
    Stuchlikova, L'
    Petrus, M.
    Harmatha, L.
    Sciana, B.
    Radziewicz, D.
    Pucicki, D.
    Tlaczala, M.
    NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 103 - 106
  • [36] Investigation of InGaAs/GaAs photodetectors with AlAs/GaAs nanolayers
    Zborowska-Lindert, I
    Radziewicz, D
    Boratynski, B
    Sciana, B
    Patela, S
    Tlaczala, M
    ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS, 2000, : 115 - 118
  • [37] Band offset of InGaAs(N)/GaAs interfaces from first principles
    Komsa, Hannu-Pekka
    Arola, Eero
    Rantala, Tapio T.
    APPLIED PHYSICS LETTERS, 2008, 92 (26)
  • [38] Electron mobility in the GaAs/InGaAs/GaAs quantum wells
    Vainberg, V. V.
    Pylypchuk, A. S.
    Baidus, N. V.
    Zvonkov, B. N.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2013, 16 (02) : 152 - 161
  • [39] Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs
    Mooney, P. M.
    Kavanagh, K. L.
    Owen, D.
    Lackner, D.
    Cawston-Grant, B.
    Basile, A. F.
    Salehzadeh, O.
    Watkins, S. P.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (07)
  • [40] In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (001)
    Owen, D. L.
    Lackner, D.
    Pitts, O. J.
    PWatkins, S.
    Mooney, P. M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (03)
12345