Growth of GaN metalorganic chemical vapour deposition layers on GaN single crystals

被引:0
|
作者
Pakula, K.
Baranowski, J.M.
Stepniewski, R.
Wysmolek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
    Schenk, H. P. D.
    Frayssinet, E.
    Bayard, A.
    Rondi, D.
    Cordier, Y.
    Kennard, M.
    JOURNAL OF CRYSTAL GROWTH, 2011, 314 (01) : 85 - 91
  • [32] Growth of a-plane GaN films on r-plane sapphire substrates by metalorganic chemical vapour deposition
    Li, DS
    Chen, H
    Yu, HB
    Zheng, XH
    Huang, Q
    Zhou, JM
    CHINESE PHYSICS LETTERS, 2004, 21 (05) : 970 - 971
  • [33] Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition
    A. Kadys
    T. Malinauskas
    T. Grinys
    M. Dmukauskas
    J. Mickevičius
    J. Aleknavičius
    R. Tomašiūnas
    A. Selskis
    R. Kondrotas
    S. Stanionytė
    H. Lugauer
    M. Strassburg
    Journal of Electronic Materials, 2015, 44 : 188 - 193
  • [34] Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition
    Kadys, A.
    Malinauskas, T.
    Grinys, T.
    Dmukauskas, M.
    Mickevicius, J.
    Aleknavicius, J.
    Tomasiunas, R.
    Selskis, A.
    Kondrotas, R.
    Stanionyte, S.
    Lugauer, H.
    Strassburg, M.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (01) : 188 - 193
  • [35] The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition
    Kim, HJ
    Na, H
    Kwon, SY
    Seo, HC
    Kim, HJ
    Shin, Y
    Lee, KH
    Kim, YW
    Yoon, S
    Oh, HJ
    Sone, C
    Park, Y
    Cho, YH
    Sun, YP
    Yoon, E
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2834 - 2837
  • [36] NOVEL METALORGANIC CHEMICAL VAPOR-DEPOSITION SYSTEM FOR GAN GROWTH
    NAKAMURA, S
    HARADA, Y
    SENO, M
    APPLIED PHYSICS LETTERS, 1991, 58 (18) : 2021 - 2023
  • [37] Growth of InGaN and GaN films by photoassisted metalorganic chemical vapor deposition
    Tomar, MS
    Rutherford, R
    New, C
    Kuenhold, KA
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2000, 63 (04) : 437 - 443
  • [38] GaN growth on Si pillar arrays by metalorganic chemical vapor deposition
    Won, Dongjin
    Weng, Xiaojun
    Yuwen, Yu A.
    Ke, Yue
    Kendrick, Chito
    Shen, Haoting
    Mayer, Theresa S.
    Redwing, Joan M.
    JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 259 - 264
  • [39] Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process
    Meng, Jiandong
    Jaluria, Yogesh
    JOURNAL OF MANUFACTURING SCIENCE AND ENGINEERING-TRANSACTIONS OF THE ASME, 2013, 135 (06):
  • [40] Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition
    Kipshidze, G
    Yavich, B
    Chandolu, A
    Yun, J
    Kuryatkov, V
    Ahmad, I
    Aurongzeb, D
    Holtz, M
    Temkin, H
    APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3