共 50 条
- [1] CARBIDE AND NITRIDE CARBIDE LAYERS IN IRON SYNTHESIZED BY ION-IMPLANTATION MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 19 (03): : 281 - 284
- [2] Structure and composition of silicon carbide films synthesized by ion implantation Physics of the Solid State, 2014, 56 : 2307 - 2321
- [3] Ion implantation and thermal annealing in silicon carbide and gallium nitride NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 178 : 204 - 208
- [5] Conductive tungsten-based layers synthesized by ion implantation into 6H-silicon carbide MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 : 179 - 184
- [6] Conductive tungsten-based layers synthesized by ion implantation into 6H-silicon carbide MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 283 - 288
- [7] Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices MICRO-SWITZERLAND, 2022, 2 (01): : 23 - 53
- [8] Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3): : 237 - 243
- [9] Ion implantation of silicon carbide NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 : 186 - 194
- [10] Formation of silicon carbide and nitride by ECR microwave plasma immersion ion implantation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 141 (1-4): : 663 - 669