Searching for room temperature ferromagnetism in transition metal implanted ZnO and GaN

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[1] [1,2,Pereira, L.M.C.
[2] Araújo, J.P.
[3] Wahl, U.
[4] Decoster, S.
[5] Van Bael, M.J.
[6] Temst, K.
[7] Vantomme, A.
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Pereira, L.M.C. (lino.pereira@fys.kuleuven.be) | 1600年 / American Institute of Physics Inc.卷 / 113期
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Significant progress in the field of wide-gap dilute magnetic semiconductors (DMS) depends on the discovery of a material system which not only shows high-temperature ferromagnetism but is also simple to prepare and thus easy to reproduce. In this context; ion implantation is an attractive doping method; being both relatively simple and highly reproducible. Here; we report on the search for high-temperature ferromagnetism in ZnO and GaN implanted with Mn; Fe; and Co; prepared under a wide range of implantation and post-processing conditions. We focused on the low concentration regime (∼ 0.3 - 4 %) in order to avoid phase segregation and applied strict experimental procedures to avoid ferromagnetic contamination. Despite the wide range of materials; implantation and post-processing conditions; none of the DMS systems showed room-temperature ferromagnetism. These results support the view that dilute transition-metal moments do not order ferromagnetically in ZnO and GaN. © 2013 American Institute of Physics;
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