Heteroepitaxy of InP on GaAs substrates using metamorphic buffers and strained Layer Superlattice

被引:0
|
作者
Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China [1 ]
机构
来源
Zhongguo Jiguang | 2008年 / SUPPL. 2卷 / 68-72期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Strain relaxation comparison of GaInP and AlInAs metamorphic buffers grown on GaAs substrates
    Li, Kuilong
    Wang, Wenjia
    Wang, Qiang
    Leng, Jiancai
    Journal of Alloys and Compounds, 2018, 768 : 74 - 80
  • [22] Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer
    Hwang, SM
    Choi, IH
    Park, YJ
    Hyon, CK
    Kim, EK
    Min, SK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (03) : 261 - 265
  • [23] DERIVATIVE PHOTOCURRENT SPECTRUM OF AN INGAAS/GAAS STRAINED-LAYER SUPERLATTICE
    FRITZ, IJ
    DOYLE, BL
    DRUMMOND, TJ
    BIEFELD, RM
    OSBOURN, GC
    APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1606 - 1608
  • [24] Highly polarized electron source using InGaAs-GaAs strained-layer superlattice
    Omori, Tsunehiko, 1600, JJAP, Minato-ku, Japan (33):
  • [25] A optical and structural characteristic on InGaAs/GaAs strained-layer superlattice
    Li, M
    Li, XQ
    Song, XW
    Ge, ZJ
    Zhang, XD
    CURRENT DEVELOPMENTS IN OPTICAL ELEMENTS AND MANUFACTURING, 1998, 3557 : 64 - 66
  • [26] HIGHLY POLARIZED ELECTRON SOURCE USING INGAAS-GAAS STRAINED-LAYER SUPERLATTICE
    OMORI, T
    KURIHARA, Y
    TAKEUCHI, Y
    YOSHIOKA, M
    NAKANISHI, T
    OKUMI, S
    TSUBATA, M
    TAWADA, M
    TOGAWA, K
    TANIMOTO, Y
    TAKAHASHI, C
    BABA, T
    MIZUTA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5676 - 5680
  • [27] STABILITY OF THE STRAINED-LAYER SUPERLATTICE (GAP)1/(INP)1 (001)
    NELSON, JS
    BATRA, IP
    PHYSICAL REVIEW B, 1989, 39 (05): : 3250 - 3253
  • [28] DETERMINATION OF COMPLEXES AND DIFFUSION MECHANISMS IN A GAP/INP STRAINED-LAYER SUPERLATTICE
    WANG, EG
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 174 (02): : 367 - 374
  • [29] Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates
    Song, Yuxin
    Wang, Shumin
    Tangring, Ivar
    Lai, Zonghe
    Sadeghi, Mahdad
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [30] Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE
    Lee, CT
    Wang, CY
    Chou, YC
    THIN SOLID FILMS, 1996, 286 (1-2) : 107 - 110