Design of phosphor-free single-chip white light-emitting diodes using InAlGaN irregular Multiple Quantum Well Structures

被引:3
|
作者
Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China [1 ]
机构
来源
Chin. Phys. Lett. | 2009年 / 8卷
关键词
18;
D O I
10.1088/0256-307X/26/8/087803
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates
    Hieu Pham Trung Nguyen
    Qi Wang
    Zetian Mi
    Journal of Electronic Materials, 2014, 43 : 868 - 872
  • [22] Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes
    Sim, Young Chul
    Lim, Seung-Hyuk
    Yoo, Yang-Seok
    Jang, Min-Ho
    Choi, Sunghan
    Yeo, Hwan-Seop
    Woo, Kie Young
    Lee, Sangwon
    Song, Hyun Gyu
    Cho, Yong-Hoon
    NANOSCALE, 2018, 10 (10) : 4686 - 4695
  • [23] Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes
    Jahangir, Shafat
    Pietzonka, Ines
    Strassburg, Martin
    Bhattacharya, Pallab
    APPLIED PHYSICS LETTERS, 2014, 105 (11)
  • [24] Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/InGaN multiple quantum wells on ternary InGaN substrates
    Ooi, Yu Kee
    Zhang, Jing
    AIP ADVANCES, 2015, 5 (05)
  • [25] Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures
    Lim, Seung-Hyuk
    Ko, Young-Ho
    Rodriguez, Christophe
    Gong, Su-Hyun
    Cho, Yong-Hoon
    LIGHT-SCIENCE & APPLICATIONS, 2016, 5 : e16030 - e16030
  • [26] Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures
    Seung-Hyuk Lim
    Young-Ho Ko
    Christophe Rodriguez
    Su-Hyun Gong
    Yong-Hoon Cho
    Light: Science & Applications, 2016, 5 : e16030 - e16030
  • [27] Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots
    Yang, Di
    Wang, Lai
    Lv, Wen-Bin
    Hao, Zhi-Biao
    Luo, Yi
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 82 : 26 - 32
  • [28] InGaN-based single-chip multicolor light-emitting diodes
    Azuhata, T
    Homma, T
    Ishikawa, Y
    Chichibu, SF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B): : L497 - L498
  • [29] Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission
    Kowsz, S. J.
    Pynn, C. D.
    Oh, S. H.
    Farrell, R. M.
    DenBaars, S. P.
    Nakamura, S.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (03)
  • [30] Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light
    Shi, J. -W.
    Huang, H. -Y
    Wang, C. -K.
    Sheu, J. -K.
    Lai, W. -C.
    Wu, Y-S.
    Chen, C. -H.
    Chu, J. -T.
    Kuo, H. -C.
    Lin, Wei-Ping
    Yang, Tsung-Hsun
    Chyi, J. -I.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (21-24) : 2593 - 2595