An optimization design methodology for CMOS UWB LNA

被引：0
|
作者：
Liu, Meng-Meng [1 ]
Zhang, Sheng [2 ]
Wang, Shuo [1 ]
Zhang, Jian-Liang [1 ]
Zhou, Run-De [1 ]
机构：
[1] Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
[2] Shenzhen Graduate School, Tsinghua University, Shenzhen 518055, China
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2009年 / 37卷 / 05期
关键词：
CMOS integrated circuits - Integrated circuit design - Ultra-wideband (UWB) - Low power electronics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An optimization methodology is proposed for designing ultra-wideband (UWB) low noise amplifier (LNA) in CMOS technology to achieve better performance of LNA in UWB RF front-end. Based on the circuit model of inductively source degenerated LNA, we present a design method using mathematics optimization technology to get optimum transistor size and component value in input matching net and load net, leading to fine input matching, adequate and flat gain, excellent noise performance as well as low power consumption. Meanwhile, the passive components in the proposed circuit can be implemented easily in CMOS technology with tolerance of process variation. Simulation results show that UWB LNA using this design methodology can achieve expectable performance.
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页码：1082 / 1086
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