An optimization design methodology for CMOS UWB LNA

An optimization methodology is proposed for designing ultra-wideband (UWB) low noise amplifier (LNA) in CMOS technology to achieve better performance of LNA in UWB RF front-end. Based on the circuit model of inductively source degenerated LNA, we present a design method using mathematics optimization technology to get optimum transistor size and component value in input matching net and load net, leading to fine input matching, adequate and flat gain, excellent noise performance as well as low power consumption. Meanwhile, the passive components in the proposed circuit can be implemented easily in CMOS technology with tolerance of process variation. Simulation results show that UWB LNA using this design methodology can achieve expectable performance.