Low-temperature silicon oxide offset spacer using plasma-enhanced atomic layer deposition for high-k/metal gate transistor

被引：0
|
作者：
Process Technology Development Division, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan [1 ]
机构：
来源：
Jpn. J. Appl. Phys. | / 4 PART 2卷
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
04DB11
中图分类号：
学科分类号：
摘要：
Atomic layer deposition - Titanium oxides - Chemical bonds - Oxide films - Silicon compounds - Titanium nitride - X ray photoelectron spectroscopy - Drain current - High-k dielectric - Chemical vapor deposition - Refractory metal compounds - Temperature
引用
收藏
相关论文
共 50 条
  • [21] Low-Temperature Plasma-Enhanced Atomic Layer Deposition of ZnMgO for Efficient CZTS Solar Cells
    Cui, Xin
    Sun, Kaiwen
    Huang, Jialiang
    Sun, Heng
    Wang, Ao
    Yuan, Xiaojie
    Green, Martin
    Hoex, Bram
    Hao, Xiaojing
    ACS MATERIALS LETTERS, 2023,
  • [22] Low-temperature growth of SiO2 films by plasma-enhanced atomic layer deposition
    Lim, JW
    Yun, SJ
    Lee, JH
    ETRI JOURNAL, 2005, 27 (01) : 118 - 121
  • [23] Low-temperature deposition of microcrystalline silicon by microwave plasma-enhanced sputtering
    Müller, P
    Holber, WM
    Henrion, W
    Nebauer, E
    Schlosser, V
    Selle, B
    Sieber, I
    Fuhs, W
    SOLID STATE PHENOMENA, 1999, 67-8 : 119 - 124
  • [24] Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
    Shin, Donghyuk
    Song, Heungseop
    Lee, Minhyeong
    Park, Heungsoo
    Ko, Dae-Hong
    THIN SOLID FILMS, 2018, 660 : 572 - 577
  • [25] New high-k SrTa2O6 gate dielectrics prepared by plasma-enhanced atomic layer chemical vapor deposition
    Chae, Byung-Gyu
    Lee, Won-Jae
    You, In-Kyu
    Ryu, Sang-Ouk
    Jung, Moon-Youn
    Yu, Byoung-Gon
    Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (6 B):
  • [26] New high-k SrTa2O6 gate dielectrics prepared by plasma-enhanced atomic layer chemical vapor deposition
    Chae, BG
    Lee, WJ
    You, IK
    Ryu, SO
    Jung, MY
    Yu, BG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (6B): : L729 - L731
  • [27] Characteristics of Hafnium Oxide Gate Dielectrics Deposited by Remote Plasma-enhanced Atomic Layer Deposition using Oxygen Plasma
    Cho, Seungchan
    Jeon, Hyeongtag
    Kim, Yangdo
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2007, 17 (05): : 263 - 267
  • [28] Plasma-enhanced atomic layer deposition of nickel and nickel oxide on silicon for photoelectrochemical applications
    O'Donnell, S.
    O'Neill, D.
    Shiel, K.
    Snelgrove, M.
    Jose, F.
    McFeely, C.
    O'Connor, R.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (41)
  • [29] Low-temperature deposition of aluminum oxide by radical enhanced atomic layer deposition
    Niskanen, A
    Arstila, K
    Ritala, M
    Leskelä, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (07) : F90 - F93
  • [30] Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices
    Bethge, Ole
    Abermann, Stephan
    Henkel, Christoph
    Bertagnolli, Emmerich
    THIN SOLID FILMS, 2009, 517 (18) : 5543 - 5547
12345