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- [31] Robustness of CNT via interconnect fabricated by low temperature process over a high-density currentPROCEEDINGS OF THE IEEE 2008 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2008, : 237 - +Kawabata, Akio论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanSato, Shintaro论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanNozue, Tatsuhiro论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanHyakushima, Takashi论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanNorimatsu, Masaaki论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanMishima, Miho论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanMurakami, Tomo论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanKondo, Daiyu论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanAsano, Koji论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanOhfuti, Mari论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan论文数: 引用数: h-index:机构:Sakai, Tadashi论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanNiheil, Mizuhisa论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, JapanAwano, Yuji论文数: 0 引用数: 0 h-index: 0机构: MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan MIRAI Selete Semicond Leading Edge Technol Inc, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan
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