Retention mechanism of localized silicon-oxide-nitride-oxide-silicon embedded NOR device

被引：0
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作者：
Hyun, JaeWoong [1 ]
Jeong, YounSeok [1 ]
Chae, HeeSoon [1 ]
Seo, Sunae [1 ]
Kim, JinHee [2 ]
Um, MyungYoon [2 ]
Lee, ByoungJin [2 ]
Kim, KiChul [2 ]
Cho, InWook [2 ]
Bae, GeumJong [2 ]
Lee, NaeIn [2 ]
Kim, ChungWoo [1 ]
机构：
[1] Semiconductor Device and Material Laboratory, Samsung Advanced Institute of Technology (SAIT), Mt 14-1, Nongseo-ri, Yongin, Kyungki-do 449-712, Korea, Republic of
[2] System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2006年 / 45卷 / 37-41期
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