Optical characterization of thermally annealed self-assembled ZnCdSe quantum dots

被引:0
|
作者
Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany [1 ]
不详 [2 ]
不详 [3 ]
机构
来源
Phys. Status Solidi C Curr. Top. Solid State Phys. | 2007年 / 9卷 / 3280-3288期
关键词
Excitons - Photoluminescence spectroscopy - Rapid thermal annealing - Self assembly - Zinc compounds;
D O I
10.1002/pssc.200775411
中图分类号
学科分类号
摘要
Post-growth thermal annealing, (TA) in combination with mesa-fabrication technologies, was applied to tune the shape and material composition of ZnCdSe quantum dots (QDs). The QDs were studied by means of photoluminescence spectroscopy. An enhancement of QD homogeneity due to TA is demonstrated by substantial narrowing of the QD emission, observed from large QD ensembles. Energy shifts of QD luminescence, exceeding 100 meV after thermal annealing, were observed. Tracing the evolution of single exciton lines, the activation energy of an enhanced diffusion process in small mesas was determined. Distinct changes of quantum dot symmetries were identified through a reduction of the exciton fine structure splitting. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
引用
收藏
相关论文
共 50 条
  • [41] Self-assembled metal quantum dots
    Chen, L. J.
    Su, P. Y.
    Liang, J. M.
    Hu, J. C.
    Wu, W. W.
    Cheng, S. L.
    International Journal of Nanoscience, Vol 3, No 6, 2004, 3 (06): : 877 - 889
  • [42] Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots
    Yahyaoui, M.
    Sellami, K.
    Ben Radhia, S.
    Boujdaria, K.
    Chamarro, M.
    Eble, B.
    Testelin, C.
    Lemaitre, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (07)
  • [43] Time-resolved studies of annealed InAs/GaAs self-assembled quantum dots
    Malik, S
    Le Ru, EC
    Childs, D
    Murray, R
    PHYSICAL REVIEW B, 2001, 63 (15):
  • [44] Enhanced Zn-Cd interdiffusion and biexciton formation in self-assembled CdZnSe quantum dots in thermally annealed small mesas
    Margapoti, E.
    Worschech, L.
    Forchel, A.
    Slobodskyy, T.
    Molenkamp, L. W.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
  • [45] Polarization of emission from self-assembled quantum dots and its application to the optical characterization of structure
    Sheng, Weidong
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 876 - 879
  • [46] Optical characteristics of hexagonal and cubic GaN self-assembled quantum dots
    Cho, YH
    Kown, BJ
    Barjon, J
    Brault, J
    Daudin, B
    Mariette, H
    Dang, L
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, 2004, 5352 : 8 - 15
  • [47] Optical gain and lasing in self-assembled InP/GaInP quantum dots
    Moritz, A
    Wirth, R
    Hangleiter, A
    Kurtenbach, A
    Eberl, K
    APPLIED PHYSICS LETTERS, 1996, 69 (02) : 212 - 214
  • [48] Optical rectification in self-assembled quantum dots: The role of incoherent pumping
    Portacio, A. A.
    Cano, L. E.
    Rasero, D. A.
    SUPERLATTICES AND MICROSTRUCTURES, 2021, 156 (156)
  • [49] Optical properties of hexagonal and cubic GaN self-assembled quantum dots
    Cho, YH
    Kwon, BJ
    Barjon, J
    Brault, J
    Daudin, B
    Mariette, H
    Dang, LS
    2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1173 - 1176
  • [50] Optical properties of self-assembled II-VI quantum dots
    Furdyna, JK
    Lee, S
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 774 - 784