980 nm high power semiconductor laser stacked arrays with non-absorbing window

被引：0

作者：

National Key Lab. on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China ^{[1
]}

机构：

来源：

J Mater Sci Technol | 2007年 / 1卷 / 36-38期

关键词：

21;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] EVAPORATION OF NON-ABSORBING TARGETS BY LASER-RADIATION
GAPONOV, SV
GENKIN, VN
GUDKOV, AA
MYLNIKOV, MY
ZHURNAL TEKHNICHESKOI FIZIKI, 1982, 52 (07): : 1351 - 1355
[22] The Principle Experiment of AlN Used as a Non-Absorbing Window Material of LDs
Liu, Chunling
Hou, Xueyi
Yao, Yanping
MACHINERY, MATERIALS SCIENCE AND ENGINEERING APPLICATIONS, 2012, 510 : 446 - 450
[23] Portable, high-accuracy, non-absorbing laser power measurement at kilowatt levels by means of radiation pressure
Williams, Paul
Hadler, Joshua
Maring, Frank
Lee, Robert
Rogers, Kyle
Simonds, Brian
Spidell, Matthew
Stephens, Michelle
Feldman, Ari
Lehman, John
OPTICS EXPRESS, 2017, 25 (04): : 4382 - 4392
[24] Design of 980nm Semiconductor Laser Diode arrays and Optical Fiber Coupling System
Lu, Xiaowei
Zhang, Zhifeng
Wang, Yunhua
Zhou, Lu
Chen, Weibo
Gao, Xin
Bo, Baoxue
2012 INTERNATIONAL CONFERENCE ON OPTOELECTRONICS AND MICROELECTRONICS (ICOM), 2012, : 119 - 122
[25] Transureathral anatomical enucleation of prostate with high-power 980 nm semiconductor laser (a report of 53 cases)
Liu, Chunxiao
Li, Bingkun
Xu, Abai
INTERNATIONAL JOURNAL OF UROLOGY, 2016, 23 : 15 - 16
[26] Etching Process of 980 nm Tapered Semiconductor Laser
Qiao Chuang
Su Rui-gong
Fang Dan
Tang Ji-long
Fang Xuan
Wang Deng-kui
Zhang Rao-shun
Wei Zhi-peng
ACTA PHOTONICA SINICA, 2018, 47 (09)
[27] Temperature Control Scheme for 980 nm Semiconductor Laser
Liu Jing
Zhang Li
Deng Xiao
Zhao Mingzhe
Hu Bingbing
Du Chao
Cui Liqin
ACTA OPTICA SINICA, 2023, 43 (07)
[28] High-power laser diodes of the spectral region of 808 nm and 980 nm
Bezotosnyi, V. V.
Bondarev, V. Yu.
Krivonos, M. S.
Oleshchenko, V. A.
Popov, Yu. M.
Cheshev, E. A.
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2010, 37 (05) : 143 - 144
[29] High-power InAlGaAs laser diodes with high efficiency at 980 nm
Mikulla, M
Schmitt, A
Walther, M
Kiefer, R
Moritz, R
Müller, S
Sah, RE
Braunstein, J
Weimann, G
IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 80 - +
[30] High-power InAlGaAs laser diodes with high efficiency at 980 nm
Mikulla, M.
Schmitt, A.
Walther, M.
Kiefer, R.
Moritz, R.
Meuller, S.
Sah, R.E.
Braunteins, J.
Weimann, G.
Proceedings of SPIE - The International Society for Optical Engineering, 3628 : 80 - 85

← 1 2 3 4 5 →