2H-SiC dendritic nanocrystals in situ formation from amorphous silicon carbide under electron beam irradiation

被引：3
|
作者：
Li, Xianxiang [1 ]
Hu, Xiaobo [1 ]
Jiang, Shouzhen [1 ]
Dong, Jie [1 ]
Xu, Xiangang [1 ]
Jiang, Minhua [1 ]
机构：
[1] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
来源：
Journal of Rare Earths | 2006年 / 24卷 / SUPPL.期
关键词：
D O I：
10.1016/S1002-0721(06)60065-3
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：54 / 55
相关论文
共 50 条
  • [41] Formation mechanisms of a nano-island array of Zn nanocrystals embedded in a SiO2 nanowire by using electrospinning and electron-beam irradiation
    Shin, J. W.
    Lee, J. Y.
    Ryu, J. T.
    Kim, T. W.
    CURRENT APPLIED PHYSICS, 2011, 11 (03) : 687 - 691
  • [42] STUDY OF AEROSOL FORMATION AND GROWTH BY IRRADIATION OF HIGH-ENERGY ELECTRON-BEAM .2. KINETIC STUDY OF NOX REMOVAL FROM N2-NO AND N2-O2-NO MIXTURES UNDER IRRADIATION WITH HIGH-ENERGY ELECTRON-BEAM
    KODA, S
    TSUCHIYA, S
    NIPPON KAGAKU KAISHI, 1979, (02) : 164 - 171
  • [43] Rate of iron carbide formation from reduced iron in CO-H2-H2S mixtures under pressurized conditions
    Iguchi, Y
    Hori-i, K
    Shibata, T
    Hayashi, S
    ISIJ INTERNATIONAL, 2004, 44 (06) : 984 - 991
  • [44] DYNAMIC REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF 3C-SIC(001) SURFACE RECONSTRUCTION UNDER SI2H6 BEAM IRRADIATION
    YOSHINOBU, T
    IZUMIKAWA, I
    MITSUI, H
    FUYUKI, T
    MATSUNAMI, H
    APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2844 - 2846
  • [45] Plasma deposition of amorphous SiC:H,F alloys from SiF4-CH4-H-2 mixtures under modulated conditions
    Cicala, G
    Capezzuto, P
    Bruno, G
    Schiavulli, L
    Amato, G
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8856 - 8858
  • [46] From amorphous to microcrystalline silicon deposition in SiF4-H2-He plasmas:: in situ control by optical emission spectroscopy
    Cicala, G
    Capezzuto, P
    Bruno, G
    THIN SOLID FILMS, 2001, 383 (1-2) : 203 - 205
  • [47] Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1
    Wrobel, Aleksander M.
    Walkiewicz-Pietrzykowska, Agnieszka
    Ahola, Marja
    Vayrynen, I. Juhani
    Ferrer-Fernandez, Francisco J.
    Gonzalez-Elipe, Agustin R.
    CHEMICAL VAPOR DEPOSITION, 2009, 15 (1-3) : 39 - 46
  • [48] Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Coatings Produced by Remote Hydrogen Microwave Plasma CVD from Bis(dimethylsilyl)ethane - a Novel Single-Source Precursor
    Wrobel, Aleksander M.
    Walkiewicz-Pietrzykowska, Agnieszka
    Uznanski, Pawel
    Glebocki, Bartosz
    CHEMICAL VAPOR DEPOSITION, 2011, 17 (7-9) : 186 - +
  • [49] Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiC under Electron Beam Irradiation
    Yao, Yong-Zhao
    Sugawara, Yoshihiro
    Ishikawa, Yukari
    Danno, Katsunori
    Suzuki, Hiroshi
    Bessho, Takeshi
    Kawai, Yoichiro
    Shibata, Noriyoshi
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 45 - +
  • [50] A STUDY OF AEROSOL FORMATION AND GROWTH BY IRRADIATION OF HIGH-ENERGY ELECTRON-BEAM .3. CHEMICAL AND PHYSICAL PROCESSES IN THE N2-NO-NH3-O2 MIXTURE UNDER THE IRRADIATION WITH A HIGH-ENERGY ELECTRON-BEAM
    KODA, S
    TSUCHIYA, S
    NIPPON KAGAKU KAISHI, 1981, (08) : 1313 - 1318
12345