Single-electron transfer by inter-dopant coupling tuning in doped nanowire silicon-on-insulator field-effect transistors

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作者：
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan [1 ]
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来源：
Appl. Phys. Express | / 7卷
关键词：
Compendex;
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071201
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摘要：
Doping (additives)
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