Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices

被引：0
|
作者：
Cheng, Weitao [1 ]
Teramoto, Akinobu [2 ]
Hirayama, Masaki [2 ]
Sugawa, Shigetoshi [1 ]
Ohmi, Tadahiro [2 ]
机构：
[1] Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
[2] New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
关键词：
In this study; we focus on the improved device characteristics of fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si(110) surface using normally off accumulation-mode device structures. It is demonstrated that the current drivability of an accumulation-mode FD-SOI n-MOSFET on Si(110) is about 1.5 times larger than that of a conventional inversion-mode FD-SOI n-MOSFET on a (110)-oriented surface. Furthermore; it is confirmed that the current drivability of an accumulation-mode FD-SOI p-MOSFET fabricated on Si(110) is also 3 times larger than that of a conventional FD-SOI pMOS formed on a Si(110) surface. © 2006 The Japan Society of Applied Physics;
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页码：3110 / 3116
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