Analysis of reaction kinetics and numerical simulation of GaN growth by MOCVD

被引：0
|
作者：
Xu, Qian [1 ]
Zuo, Ran [1 ]
Zhang, Hong [1 ]
机构：
[1] School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China
来源：
Huagong Xuebao/CIESC Journal | 2009年 / 60卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
页码：384 / 388
相关论文
共 50 条
  • [11] DFT study on adduct reaction paths of GaN MOCVD growth
    JunCao Shi
    Ran Zuo
    SuCi Meng
    Science China Technological Sciences, 2013, 56 : 1644 - 1650
  • [12] DFT study on adduct reaction paths of GaN MOCVD growth
    Shi JunCao
    Zuo Ran
    Meng SuCi
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2013, 56 (07) : 1644 - 1650
  • [13] Effect of adduct reactions on chemical reaction path of GaN MOCVD growth
    Suzhou Institute of Technology, Jiangsu University of Science and Technology, Zhangjiagang, China
    不详
    Rengong Jingti Xuebao, 12 (3687-3691 and 3698): : 3687 - 3691
  • [14] GaN growth by remote plasma MOCVD: Chemistry and kinetics by real time ellipsometry
    Losurdo, M
    Capezzuto, P
    Bruno, G
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [15] NUMERICAL STUDY AND OPTIMIZATION OF GAN THIN-FILM GROWTH BY MOCVD METHOD
    Fang, H. S.
    Pan, Y. Y.
    Wei, J. A.
    Liu, S.
    Zhang, Z.
    Zheng, L. L.
    PROCEEDINGS OF THE ASME SUMMER HEAT TRANSFER CONFERENCE - 2013, VOL 4, 2014,
  • [16] Kinetics of persistent photoconductivity in GaN grown by MOCVD
    Cai, S
    Nener, BD
    Dell, JM
    Faraone, L
    COMMAD 2000 PROCEEDINGS, 2000, : 165 - 168
  • [17] Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity
    Zhang, Zhi
    Fang, Haisheng
    Yao, Qingxia
    Yan, Han
    Gan, Zhiyin
    JOURNAL OF CRYSTAL GROWTH, 2016, 454 : 87 - 95
  • [18] A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3
    Serrano Perez, Edgar
    Velazquez, Miguel A. Nunez
    Juarez Lopez, Fernando
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 4-5, 2015, 12 (4-5): : 389 - 393
  • [19] Numerical simulation of ammonothermal growth processes of GaN crystals
    Jiang, Yan-Ni
    Chen, Qi-Sheng
    Prasad, V.
    JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 411 - 414
  • [20] Numerical simulation in ammonothermal growth of single crystals of GaN
    Jiang, Yan-Ni
    Chen, Qi-Sheng
    Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics, 2010, 31 (08): : 1392 - 1394
12345