Analysis of reaction kinetics and numerical simulation of GaN growth by MOCVD

被引：0
|
作者：
Xu, Qian [1 ]
Zuo, Ran [1 ]
Zhang, Hong [1 ]
机构：
[1] School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China
来源：
Huagong Xuebao/CIESC Journal | 2009年 / 60卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
页码：384 / 388
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