Effect of seed layer on room temperature tunnel magnetoresistance of MgO barriers formed by radical oxidation in IrMn-based magnetic tunnel junctions

被引：0
|
作者：
Dahmani, Faiz [1 ]
机构：
[1] Altis Semiconductor, 224 Bd. John F Kennedy, Corbeil Essonnes 91105, France
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 4 PART 1期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
043002
中图分类号：
学科分类号：
摘要：
Atomic force microscopy - High resolution transmission electron microscopy - X ray diffraction - Grain size and shape - Surface roughness - Tunnel junctions - Magnetic devices - Magnesia - Tunnelling magnetoresistance
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