Spin-dependent transport in a ZnMnO/ZnO heterostructure

被引：0
|
作者：
Masuko, K. [1 ]
Ashida, A. [1 ]
Yoshimura, T. [1 ]
Fujimura, N. [1 ]
机构：
[1] Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 07期
关键词：
We report a spin-dependent transport property in modulation-doped ZnMnO:AlZnMnOZnO heterostructures. Using ZnO (000 1-) single crystal substrates; the heterostructures with atomically smooth surface and interface were prepared. For the sample with the Mn concentration of 12 at. %; the electron confinement at the ZnMnOZnO interface was recognized; indicating that ZnMnO layer acted as a barrier layer. In this paper; we investigated if an s-d exchange interaction exists between s electron conducting in the ZnO channel layer and Mn d spin in the ZnMnO barrier layer at the interface. To eliminate the Lorentz force and weak localization effects from the magnetoresistance (MR); the MR was measured under the magnetic field parallel to the sample surface. For a ZnMnOZnO heterostructure with the sheet carrier concentration of 5.46× 1012 cm-2; at; 1.85; K; the parallel-field MR revealed that a positive MR was dominant below 0.8 T; while a negative MR was recognized above 0.8 T. The positive MR was well fitted to a Brillouin function; suggesting the existence of an s-d exchange interaction at the ZnMnOZnO interface. The effect of the sheet carrier concentration on the MR behavior was also discussed. © 2008 American Institute of Physics;
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