Morphology and electronic properties of the pentacene on cobalt interface

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作者：
Tiba, M.V. [1 ]
De Jonge, W.J.M. [1 ]
Koopmans, B. [1 ]
Jonkman, H.T. [2 ]
机构：
[1] Department of Applied Physics, Center for NanoMaterials, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
[2] Molecular Electronics, Materials Science Center, University of Groningen, Nijenborg 4, 9747 AG Groningen, Netherlands
来源：
Journal of Applied Physics | 2006年 / 100卷 / 09期
关键词：
In this paper; we report the structural and electronic properties of pentacene thin films grown on a polycrystalline Co film using atomic force microscopy and ultraviolet photoemission spectroscopy (UPS); respectively. Investigation of this type of interface is of importance for the engineering of hybrid organometallic spintronic devices for which the use of spin polarized electrodes is a prerequisite. Uniform single crystalline areas of pentacene as large as several micrometers; with molecules arranging almost perpendicular to the substrate; were obtained. For the electronic properties at this interface; we have found an energy barrier for the hole injection of about 1 eV; in spite of the fact that the ionization potential of pentacene reported previously equals the work function of Co. A shift of the vacuum level of the same magnitude has also been observed. A comparison of the UPS spectra of the pentacene films with the gas phase spectrum directly indicates that hybridization effects are present at this interface. © 2006 American Institute of Physics;
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