Blue laser annealing can be used to obtain a high-mobility thin-film transistor (TFT) through a laser annealing (i.e., LTPS: low-temperature Poly-Si) process. However, the laser annealing process's low productivity (as well as high cost) is an issue because the high output power of blue lasers still needs to be addressed. Therefore, productivity can be improved if blue laser energy is efficiently supplied during the laser annealing process using a continuous wave laser instead of a conventional pulsed excimer laser. We developed a blue laser light source (440 +/- 10 nm) using the wavelength beam combining (WBC) method, which can achieve a laser power density of 73.7 kW/cm2. In this semiconductor laser, when the power was increased s by 2.9 times, the laser scanning speed was increased by 5.0 times, achieving twice the productivity of conventional lasers. After laser annealing, the size of the crystal grains varied between 2 and 15 mu m, resulting in a crystallization rate of 100% by Raman scattering rsult and low resistivity of 0.04 Omega cm. This increase in production capacity is not an arithmetic increase with increased power but a geometric production progression.
