The influence of defects and impurities on electrical properties of high high - k diele dielectrics trics

被引：0
|
作者：
Dabrowski, J. [1 ]
Miyazaki, S. [2 ]
Inumiya, S. [3 ]
Kozlowski, G. [1 ]
Lippert, G. [1 ]
Lu-Pina, G. [1 ]
Nara, Y. [2 ]
Müssig, H.-J. [1 ]
Ohta, A. [2 ]
Pei, Y. [3 ]
机构：
[1] IHP, Im Technologiepark 25, 15236 Fr Frankfurt (Oder), Germany
[2] Graduate School of AdSM, Hiroshima University, Kagamiyama 1-3-3, Higashi-Hiroshima 739-8530, Japan
[3] Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tukuba 305 305-8501, Japan
来源：
Materials Science Forum | 2009年 / 608卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
204
引用
收藏
页码：55 / 109
相关论文
共 50 条
  • [31] Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
    Duenas, S.
    Castan, H.
    Garcia, H.
    Gomez, A.
    Bailon, L.
    Kukli, K.
    Hatanpaeae, T.
    Lu, J.
    Ritala, M.
    Leskelae, M.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (10) : G207 - G214
  • [32] Influence of charge trapping on ac reliability of HIGH-K dielectrics
    Kerber, M
    Duschl, R
    Reisinger, H
    Jakschik, S
    Schröder, U
    Hecht, T
    Kudelka, S
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 585 - 586
  • [33] Effect of Annealing on the Structural and Electrical Properties of High-k Sm2O3 Dielectrics
    Pan, Tung-Ming
    Huang, Chun-Chin
    You, Shi-Xian
    Yeh, Chih-Cheng
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (12) : G62 - G65
  • [34] Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon
    Goldenblum, A
    Pintilie, I
    Buda, M
    Popa, A
    Lisca, M
    Botila, T
    Teodorescu, V
    Dimoulas, A
    Vellianitis, G
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (06)
  • [35] Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics
    Pan, Tung-Ming
    Chang, Wei-Tsung
    Chiu, Fu-Chien
    APPLIED SURFACE SCIENCE, 2011, 257 (09) : 3964 - 3968
  • [36] High-K gate dielectrics
    Qi, WJ
    Lee, BH
    Nieh, R
    Kang, LG
    Jeon, Y
    Onishi, K
    Lee, JC
    MICROELECTRONIC DEVICE TECHNOLOGY III, 1999, 3881 : 24 - 32
  • [37] Trapping in high-k dielectrics
    Rao, Rosario
    Simoncini, Riccardo
    Irrera, Fernanda
    APPLIED PHYSICS LETTERS, 2010, 97 (16)
  • [38] INFLUENCE OF EXTENDED DEFECTS AND NATIVE IMPURITIES ON THE ELECTRICAL-PROPERTIES OF DIRECTIONALLY SOLIDIFIED POLYCRYSTALLINE SILICON
    PIZZINI, S
    SANDRINELLI, A
    BEGHI, M
    NARDUCCI, D
    ALLEGRETTI, F
    TORCHIO, S
    FABBRI, G
    OTTAVIANI, GP
    DEMARTIN, F
    FUSI, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : 155 - 165
  • [39] INFLUENCE OF IMPURITIES ON ELECTRICAL PROPERTIES OF LITHIUM NITRATE
    KHAMSKII, EV
    FREIDIN, BM
    SOVIET PHYSICS SOLID STATE,USSR, 1969, 10 (08): : 2011 - &
  • [40] ELECTRICAL PROPERTIES OF CERIUM OXIDE - INFLUENCE OF IMPURITIES
    WILBERT, Y
    OEHLIG, JJ
    DUQUESNOY, A
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE C, 1971, 272 (24): : 1960 - +
12345