Evolution of self-assembled type-II ZnTe/ZnSe nanostructures: Structural and electronic properties

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[1] Kim, S.J.
[2] Juang, B.-C.
[3] Wang, W.
[4] Jokisaari, J.R.
[5] Chen, C.-Y.
[6] Phillips, J.D.
[7] Pan, X.Q.
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Phillips, J.D. (jphilli@umich.edu) | 1600年 / American Institute of Physics Inc.卷 / 111期
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The strain-mediated evolution of epitaxial ZnTe/ZnSe quantum structures is studied at the atomic scale using spherical aberration-corrected scanning transmission electron microscopy; coupled with electronic properties characterized by photoluminescence spectroscopy. The growth development of these buried quantum dots clearly demonstrates a homogeneous profile with similar pyramidal geometry rather than bi-modal distribution; contradicting prior reports on ZnTe/ZnSe quantum dots. The result is consistent with atomistic theoretical calculations on strain distribution and electronic structure of a modeled quantum dot of similar geometry using a valence force field model. It is also found that the transition from 2-D islands to 3-D quantum dots involves thermally activated carrier transfer process and follows up with formation of extended defects at the quantum dot surface; acting as an effective source for remnant misfit strain relaxation. The new physical understanding concerning the growth of self-assembled ZnTe/ZnSe quantum dots embedded in the active regions provides important information for the measures to control the properties of buried ZnTe quantum dots; setting up a key footstep in developing novel materials of energy conversion. © 2012 American Institute of Physics;
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