Copper phthalocyanine thin-film transistor with a polycarbonate gate dielectric layer

被引：0

作者：

Zhang, Qiang ^{[1
]}

Ochiai, Shizuyasu ^{[1
]}

Sawa, Goro ^{[1
]}

Ohashi, Asao ^{[1
]}

Kojima, Kenzo ^{[1
]}

Uchida, Yoshiyuki ^{[2
]}

Mizutani, Teruyoshi ^{[1
]}

机构：

[1] Dept. of Electrical Eng., Aichi Inst. of Tech., 1247 Yakusa, Toyota 470-0392, Japan

[2] Dept. of Information Network Eng., Aichi Inst. of Tech., 1247 Yakusa, Toyota, 470-0392, Japan

来源：

Shinku/Journal of the Vacuum Society of Japan | 2007年 / 50卷 / 03期

关键词：

Copper compounds - Dielectric materials - Light transmission - Polycarbonates - Threshold voltage - X ray diffraction;

D O I：

10.3131/jvsj.50.155

中图分类号：

学科分类号：

摘要：

We have investigated copper phthalocyanine (CuPc) thin-film transistors (TFTs) at different substrate temperatures. X-Ray diffraction (XRD) and UV/Vis spectrometer were used to study the orientations and optical transmission spectrum of the copper phthalocyanine film which was adopted as the semiconductor layer of organic thin-film transistor. A circuit diagram was constructed to study the output characteristics of CuPc TFT with a polycarbonate (PC) gate dielectric layer. The mobility of CuPc TFT at a substrate temperature of 90°C was 1.25 × 10-4 cm2/Vs. The On/Off ratio was also improved when the substrate temperature increases. Threshold voltages were - 17 V at a substrate temperature of 70°C and - 30 V at 90°C.

引用

页码：155 / 157

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