High-throughput exploration of stable semiconductors using deep learning and density functional theory

被引:0
|
作者
Min, Gege [1 ]
Wei, Wenxu [1 ]
Fan, Qingyang [1 ]
Wan, Teng [2 ]
Ye, Ming [1 ]
Yun, Sining [3 ]
机构
[1] College of Information and Control Engineering, Xi'an University of Architecture and Technology, Xi'an,710055, China
[2] College of Science, Xi'an University of Architecture and Technology, Xi'an,710055, China
[3] Functional Materials Laboratory (FML), School of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an,710055, China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Carrier concentration - III-V semiconductors - Nitrides - Wide band gap semiconductors;
D O I
10.1016/j.mssp.2024.109150
中图分类号
学科分类号
摘要
Semiconductors can lead to new applications and technological innovations. In this work, we developed a computational pipeline to discover new semiconductors by combining deep learning and high-throughput first-principles calculations. We used a random strategy combined with group and graph theory to generate initial boron nitride polymorphs and developed a classifier based on graph convolutional neural network to screen semiconductors and study their stability. We found 26 new stable boron nitride polymorphs in Pc phase, of which 3 are direct bandgap semiconductors, and 10 are quasi-direct bandgap semiconductors. This discovery not only expands the library of known semiconductor materials but also provides potential candidates for high-performance electronic and optoelectronic devices, paving the way for future technological advancements. © 2024
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