Silicon crystal nanowires produced by metal-induced lateral crystallization

被引：0
|
作者：
Nakagawa, Gou [1 ]
Asano, Tanemasa [1 ]
机构：
[1] Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
来源：
Japanese Journal of Applied Physics | 2009年 / 48卷 / 6 PART 2期
关键词：
D O I：
10.1143/jjap.48.06fe03
中图分类号：
学科分类号：
摘要：
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页码：031 / 06
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