Effect of vacancies in monolayer MoS2 on electronic properties of Mo-MoS2 contacts

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作者：
State Key Lab of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an Shaanxi [1 ]
710072, China
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RSC Adv. | / 26卷 / 20538-20544期
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Engineering Village;
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摘要：
Electronic natures - First-principles calculation - Injection efficiency - Intrinsic defects - Nanoelectronic devices - Partial density of state - Schottky barriers - Vacancy formation
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