Total-Ionizing-Dose Tolerant SCR Devices With High Holding Voltage for ESD Protection

被引：0
|
作者：
Liu, Yujie [1 ,2 ]
Zhang, Ke [1 ,2 ]
Liu, Yansen [1 ,2 ]
Liu, Xiaonian [1 ,2 ]
Jin, Xiangliang [1 ,2 ]
机构：
[1] Hunan Normal Univ, Sch Phys & Elect, Changsha 410081, Peoples R China
[2] Coll Hunan Prov, Key Lab Phys & Devices Post Moore Era, Changsha 410081, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 12期
基金：
中国国家自然科学基金;
关键词：
Electrostatic discharge (ESD); silicon-controlled rectifier (SCR); total-ionizing-dose (TID); transmission line pulse (TLP);
D O I：
10.1109/LED.2024.3477452
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work investigates a high-voltage (HV) electrostatic discharge (ESD) device with high holding voltage and strong irradiation tolerance, called P-well grounded silicon-controlled rectifier (PGSCR). The PGSCR devices are fabricated in a standard 0.18 mu m bipolar-CMOS-DMOS (BCD) process. Transmission line pulse (TLP) testing demonstrated that the PGSCR has a holding voltage of 18.79 V and a holding current of 3.61 A. The equivalent human body model protection level is up to 19 kV. Furthermore, gamma-ray irradiation experiments demonstrated that even under total-ionizing-dose (TID) irradiation of 150 krad (Si), the ESD performance of the PGSCR exhibits minimal degradation, with the leakage current remaining at the nA level. Compared to existing HV ESD protection devices, the PGSCR exhibits superior area efficiency, high TID tolerance, and strong latch-up immunity, rendering it an exceptional candidate for HV ESD protection in space applications.
引用
收藏
页码：2284 / 2287
页数：4
相关论文
共 50 条
  • [21] Total-Ionizing-Dose Radiation Response of Partially-Depleted SOI devices
    Rezzak, Nadia
    Zhang, En Xia
    Alles, Michael L.
    Schrimpf, Ronald D.
    Hughes, Harold
    2010 IEEE INTERNATIONAL SOI CONFERENCE, 2010,
  • [22] Total ionizing dose effects in high voltage devices for flash memory
    Liu, Zhangli
    Hu, Zhiyuan
    Zhang, Zhengxuan
    Shao, Hua
    Chen, Ming
    Bi, Dawei
    Ning, Bingxu
    Wang, Ru
    Zou, Shichang
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (23): : 3498 - 3503
  • [23] Total Ionizing Dose Effects in High Breakdown Voltage SOI Devices
    Wang, Zhongjian
    Cheng, Xinhong
    Xia, Chao
    Xu, Dawei
    Shen, Lingyan
    Cao, Duo
    Zheng, Li
    Wang, Qian
    Yu, Yuehui
    2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), 2014,
  • [24] OFF-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices
    Griffoni, Alessio
    Chen, Shih-Hung
    Thijs, Steven
    Kaczer, Ben
    Franco, Jacopo
    Linten, Dimitri
    De Keersgieter, An
    Groeseneken, Guido
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (07) : 2061 - 2071
  • [25] High total-ionizing-dose tolerance field programmable gate array
    Fujimori, Takumi
    Watanabe, Minoru
    2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [26] ESD Protection Design With Stacked High-Holding-Voltage SCR for High-Voltage Pins in a Battery-Monitoring IC
    Dai, Chia-Tsen
    Ker, Ming-Dou
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (05) : 1996 - 2002
  • [27] High holding voltage cascoded LVTSCR structures for 5.5-V tolerant ESD protection clamps
    Vashchenko, VA
    Concannon, A
    ter Beek, M
    Hopper, P
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (02) : 273 - 280
  • [28] A novel SCR-LDMOS for high voltage ESD protection
    Deng Jing
    Chen Xingbi
    PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,
  • [29] A novel robust SCR with high holding voltage for on-chip ESD protection of industry-level bus
    Liu, Yujie
    Wang, Yang
    Jin, Xiangliang
    Yang, Jian
    Peng, Yan
    Luo, Jun
    SOLID-STATE ELECTRONICS, 2023, 208
  • [30] Novel SCR device for ESD protection with high-holding voltage in 0.18um BCD process
    Lim, Myoung Chul
    Eom, Young Bum
    Choi, Joung Cheul
    Nam, Sang Wook
    Park, Jeong Soo
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
12345