Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd:GdVO4 laser

被引：0
|
作者：
Liu, Jie [1 ]
Wang, Chunxing [1 ]
Tian, Wenmiao [1 ]
Liu, Shihua [1 ]
Wang, Guanggang [1 ]
Wang, Yonggang [2 ]
机构：
[1] College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
[2] Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100022, China
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 8 A期
关键词：
Semiconducting gallium arsenide;
D O I：
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中图分类号：
学科分类号：
摘要：
Journal article (JA)
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收藏
页码：6268 / 6270
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