Study of electrical characteristic in heavily doped p-type Si1-xGex/Si hetero-structure by infrared ellipsometric spectroscopy

被引：0
|
作者：
College of Physics and Electronics Engineering, Xinyang Normal University, Xinyang 464000, China [1 ]
机构：
来源：
J Rare Earth | 2006年 / SUPPL. 3卷 / 386-389期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] First-principles calculation of p-type alloy scattering in Si1-xGex
    Joyce, S.
    Murphy-Armando, F.
    Fahy, S.
    PHYSICAL REVIEW B, 2007, 75 (15):
  • [32] Metal-semiconductor junctions on p-type strained Si1-xGex layers
    Nur, O
    Willander, M
    Turan, R
    Sardela, MR
    Hansson, GV
    APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1084 - 1086
  • [33] CYCLOTRON-RESONANCE MEASUREMENTS ON P-TYPE STRAINED-LAYER SI1-XGEX/SI HETEROSTRUCTURES
    WONG, SL
    KINDER, D
    NICHOLAS, RJ
    WHALL, TE
    KUBIAK, R
    PHYSICAL REVIEW B, 1995, 51 (19): : 13499 - 13502
  • [34] Dislocation scatterings in p-type Si1-xGex under weak electric field
    Hur, Ji-Hyun
    Jeon, Sanghun
    NANOTECHNOLOGY, 2015, 26 (49)
  • [35] Doping-induced bandgap narrowing in Si rich n- and p-type Si1-xGex
    van Teeffelen, S
    Persson, C
    Eriksson, O
    Johansson, B
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (03) : 489 - 502
  • [36] Band gap narrowing in heavily B doped Si1-xGex strained layers
    Yao Fei
    Xue Chun-Lai
    Cheng Bu-Wen
    Wang Qi-Ming
    ACTA PHYSICA SINICA, 2007, 56 (11) : 6654 - 6659
  • [37] INTERSUBBAND ABSORPTION IN MODULATION-DOPED P-TYPE SI1-XGEX QUANTUM-WELLS - THEORY AND EXPERIMENT
    FROMHERZ, T
    KOPPENSTEINER, E
    HELM, M
    BAUER, G
    NUTZEL, JF
    ABSTREITER, G
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (03) : 229 - 232
  • [38] HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS
    CARNS, TK
    CHUN, SK
    TANNER, MO
    WANG, KL
    KAMINS, TI
    TURNER, JE
    LIE, DYC
    NICOLET, MA
    WILSON, RG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (07) : 1273 - 1281
  • [39] STUDY OF THE LOCAL MODE OF BORON IN HEAVILY DOPED P-TYPE SI(B)
    CHANDRASEKHAR, M
    CHANDRASEKHAR, HR
    CARDONA, M
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 442 - 442
  • [40] Threshold voltage and charge control considerations in double quantum well Si/Si1-xGex p-type MOSFETs
    Yousif, MYA
    Nur, O
    Chretien, O
    Fu, Y
    Willander, M
    SOLID-STATE ELECTRONICS, 1998, 42 (06) : 951 - 956
12345