Analysis of dielectric function of silicon films with spectroscopic ellipsometry

被引:0
|
作者
Dept. of Optoelectronics, Chengdu University of Information Technology, Chengdu 610225, China [1 ]
机构
来源
Bandaoti Guangdian | 2008年 / 2卷 / 226-230期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Spectroscopic ellipsometry (SE), a common method for films optic parameter test, owns several advantages, such as good sensitivity, excellent precision and scatheless to the samples. Firstly, the theory model of effective medium approximation(EMA) is introduced, then a computer theory fitting between EMA model and the SE measure results is operated. It indicates that the calculated results are consistent with the SE data perfectly when we assume the silicon film as a mixture of amorphous, polycrystalline and voids, and then the microstructure information of samples is obtained.
引用
收藏
相关论文
共 50 条
  • [31] Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films
    Price, J.
    Diebold, A. C.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 2156 - 2159
  • [32] Microcrystalline silicon thin films studied using spectroscopic ellipsometry
    Kang, TD
    Lee, H
    Park, SJ
    Jang, J
    Lee, S
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) : 2467 - 2474
  • [33] Spectroscopic ellipsometry study of ZnO films grown on silicon substrate
    Lin, Keh-moh
    Chou, Keng-yu
    Chen, Po-ming
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3128 - +
  • [34] DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY
    ASPNES, DE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1057 - 1060
  • [35] Composition profiling of graded dielectric function materials by spectroscopic ellipsometry
    TrolierMcKinstry, S
    Koh, J
    ELECTRICALLY BASED MICROSTRUCTURAL CHARACTERIZATION, 1996, 411 : 185 - 190
  • [36] Measurement of the dielectric function spectra of low dielectric constant using the spectroscopic ellipsometry
    Horie, M
    Postava, K
    Yamaguchi, T
    Akashika, K
    Hayashi, H
    Kitamura, F
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 : 803 - 809
  • [37] Spectral dependence of the dielectric function of quaternary CdMnCoTe by spectroscopic ellipsometry
    Hwang, Younghun
    Kim, Hyekyeong
    Um, Youngho
    Park, Hyoyeol
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 : S225 - S228
  • [38] Determining the parameters of silicon ions implanted into dielectric layers by spectroscopic ellipsometry
    V. A. Shvets
    V. Yu. Prokopyev
    S. I. Chikichev
    N. A. Aulchenko
    Optoelectronics, Instrumentation and Data Processing, 2007, 43 (5) : 445 - 452
  • [39] DIELECTRIC SEMICONDUCTOR INTERFACES ANALYSIS USING SPECTROSCOPIC ELLIPSOMETRY
    ASPNES, DE
    THEETEN, JB
    ACTA ELECTRONICA, 1982, 24 (03): : 217 - 227
  • [40] Determining the Parameters of Silicon Ions Implanted into Dielectric Layers by Spectroscopic Ellipsometry
    Shvets, V. A.
    Prokopyev, V. Yu.
    Chikichev, S. I.
    Aulchenko, N. A.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2007, 43 (05) : 445 - 452