Tunneling magnetoresistance and spin-orbit torque magnetization switching in ferrimagnetic Gd-Fe-Co based magnetic tunnel junction

被引：0

作者：

Yunokizaki, M. ^{[1
]}

Hibino, Y. ^{[2
]}

Idzuchi, H. ^{[1
,3
]}

Tsai, H. ^{[1
]}

Ishibashi, M. ^{[1
]}

Miwa, S. ^{[3
,4
]}

Hayashi, M. ^{[1
,4
]}

Nakatsuji, S. ^{[1
,3
,4
,5
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo, Tokyo 1130033, Japan

[2] Japan Natl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[4] Univ Tokyo, Transscale Quantum Sci Inst, Bunkyo ku, Tokyo 1130033, Japan

[5] Johns Hopkins Univ, Inst Quantum Matter, Dept Phys & Astron, Baltimore, MD 21218 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2025年 / 64卷 / 01期

关键词：

spintronics; magnetic tunnel junction; ferrimagnet; ROOM-TEMPERATURE MAGNETORESISTANCE; TRANSITION-METAL-ALLOYS; ANISOTROPIC MAGNETORESISTANCE; DRIVEN; FILMS;

D O I：

10.35848/1347-4065/ada1b8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-orbit torque magnetization switching is studied in three-terminal magnetic tunnel junctions with a ferrimagnetic Gd-Fe-Co free layer. Pt is used as a spin current generation layer and a Co-Fe-B synthetic antiferromagnet is used as the reference layer. A thin Fe-B layer is inserted between the Gd-Fe-Co free layer and the MgO barrier. The thickness of the Fe-B layer is varied from 4 to 12 & Aring;. We find the tunnel magnetoresistance ratio increases with increasing Fe-B layer thickness until it saturates at similar to 14%, while the current density needed to reverse the magnetization of the Gd-Fe-Co/Fe-B layer via spin-orbit torque remains almost unchanged. The results highlight the effectiveness of the thin Fe-B layer in obtaining sizable tunneling magnetoresistance and efficient spin-orbit-torque switching.

引用

页数：3

共 50 条

[31] Deterministic Magnetization Switching Using Lateral Spin-Orbit Torque
Cao, Yi
Sheng, Yu
Edmonds, Kevin William
Ji, Yang
Zheng, Houzhi
Wang, Kaiyou
ADVANCED MATERIALS, 2020, 32 (16)
[32] Spin-orbit Torque Switching of Perpendicular Magnetization in Ferromagnetic Trilayers
Dong-Kyu Lee
Kyung-Jin Lee
Scientific Reports, 10
[33] Tunneling anisotropic magnetoresistance in MgO-based magnetic tunnel junctions induced by spin-orbit coupling
Tang, Hui-Min
Wang, Shi-Zhuo
Jia, Xing-Tao
PHYSICAL REVIEW B, 2022, 106 (09)
[34] Field-Free Spin-Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source
Meng, Dequan
Chen, Shiwei
Ren, Chuantong
Li, Jiaxu
Lan, Guibin
Li, Chaozhong
Liu, Yong
Su, Yurong
Yu, Guoqiang
Chai, Guozhi
Xiong, Rui
Zhao, Weisheng
Yang, Guang
Liang, Shiheng
ADVANCED ELECTRONIC MATERIALS, 2024, 10 (04)
[35] Magnetization switching by spin-orbit torque in Pt with proximity-induced magnetic moment
Koyama, T.
Guan, Y.
Hibino, Y.
Suzuki, M.
Chiba, D.
JOURNAL OF APPLIED PHYSICS, 2017, 121 (12)
[36] Spin-orbit torque based magnetization switching in Pt/Cu/[Co/Ni]5 multilayer structures
Ostwal, Vaibhav
Penumatcha, Ashish
Hung, Yu-Ming
Kent, Andrew D.
Appenzeller, Joerg
JOURNAL OF APPLIED PHYSICS, 2017, 122 (21)
[37] Spin-Orbit Torque Induced Magnetization Switching In Co/Pt Multilayer-based Synthetic Antiferromagnets
Zhu, L.
Xu, X.
Meng, K.
Wu, Y.
Miao, J.
Jiang, Y.
2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG), 2018,
[38] Compact Modeling of a Magnetic Tunnel Junction Based on Spin Orbit Torque
Jabeur, Kotb
Di Pendina, Gregory
Prenat, Guillaume
Buda-Prejbeanu, Liliana Daniela
Dieny, Bernard
IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (07)
[39] Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin-orbit torque
Zhang, Chaoliang
Takeuchi, Yutaro
Fukami, Shunsuke
Ohno, Hideo
APPLIED PHYSICS LETTERS, 2021, 118 (09)
[40] Electric Field Control of Spin-Orbit Torque Magnetization Switching in a Spin-Orbit Ferromagnet Single Layer
Jiang, Miao
Asahara, Hirokatsu
Ohya, Shinobu
Tanaka, Masaaki
ADVANCED SCIENCE, 2023, 10 (24)

← 1 2 3 4 5 →