Tunneling magnetoresistance and spin-orbit torque magnetization switching in ferrimagnetic Gd-Fe-Co based magnetic tunnel junction

被引：0
|
作者：
Yunokizaki, M. [1 ]
Hibino, Y. [2 ]
Idzuchi, H. [1 ,3 ]
Tsai, H. [1 ]
Ishibashi, M. [1 ]
Miwa, S. [3 ,4 ]
Hayashi, M. [1 ,4 ]
Nakatsuji, S. [1 ,3 ,4 ,5 ]
机构：
[1] Univ Tokyo, Dept Phys, Bunkyo, Tokyo 1130033, Japan
[2] Japan Natl Inst Adv Ind Sci & Technol, Res Ctr Emerging Comp Technol, Tsukuba, Ibaraki 3058568, Japan
[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[4] Univ Tokyo, Transscale Quantum Sci Inst, Bunkyo ku, Tokyo 1130033, Japan
[5] Johns Hopkins Univ, Inst Quantum Matter, Dept Phys & Astron, Baltimore, MD 21218 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2025年 / 64卷 / 01期
关键词：
spintronics; magnetic tunnel junction; ferrimagnet; ROOM-TEMPERATURE MAGNETORESISTANCE; TRANSITION-METAL-ALLOYS; ANISOTROPIC MAGNETORESISTANCE; DRIVEN; FILMS;
D O I：
10.35848/1347-4065/ada1b8
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spin-orbit torque magnetization switching is studied in three-terminal magnetic tunnel junctions with a ferrimagnetic Gd-Fe-Co free layer. Pt is used as a spin current generation layer and a Co-Fe-B synthetic antiferromagnet is used as the reference layer. A thin Fe-B layer is inserted between the Gd-Fe-Co free layer and the MgO barrier. The thickness of the Fe-B layer is varied from 4 to 12 & Aring;. We find the tunnel magnetoresistance ratio increases with increasing Fe-B layer thickness until it saturates at similar to 14%, while the current density needed to reverse the magnetization of the Gd-Fe-Co/Fe-B layer via spin-orbit torque remains almost unchanged. The results highlight the effectiveness of the thin Fe-B layer in obtaining sizable tunneling magnetoresistance and efficient spin-orbit-torque switching.
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页数：3
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