Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

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[1] Chen, C.
[2] Gao, S.
[3] Zeng, F.
[4] Tang, G.S.
[5] Li, S.Z.
[6] Song, C.
[7] Fu, H.D.
[8] Pan, F.
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| 1600年 / American Institute of Physics Inc.卷 / 114期
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