Characterization of Mn-doped 3C-SiC prepared by ion implantation

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Nanotechnology Research Institute , National Institute of Advanced Industrial Science and Technology , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan [1 ]
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Journal of Applied Physics | 2007年 / 101卷 / 09期
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Conference article (CA)
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