Effect of growth temperature on AlN films deposited by laser molecular beam epitaxy

被引：0
|
作者：
Zhao, Dan [1 ]
Zhu, Jun [2 ]
Li, Yanrong [2 ]
机构：
[1] No.38 Institute of China Electrics Technology Group Corporation, Hefei 230088, China
[2] State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
来源：
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2011年 / 39卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1819 / 1824
相关论文
共 50 条
  • [41] Molecular beam epitaxy growth of iodide thin films
    Cai, Xinqiang
    Xu, Zhilin
    Ji, Shuai-Hua
    Li, Na
    Chen, Xi
    CHINESE PHYSICS B, 2021, 30 (02)
  • [42] Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy
    Rong, Xin
    Wang, Xinqiang
    Chen, Guang
    Pan, Jianhai
    Wang, Ping
    Liu, Huapeng
    Xu, Fujun
    Tan, Pingheng
    Shen, Bo
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 93 : 27 - 31
  • [43] Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy
    Yakushev, M. V.
    Babenko, A. A.
    Sidorov, Yu. G.
    INORGANIC MATERIALS, 2009, 45 (01) : 13 - 18
  • [44] Effect of orientation of the substrate on the conditions of growth of HgTe films by molecular beam epitaxy
    M. V. Yakushev
    A. A. Babenko
    Yu. G. Sidorov
    Inorganic Materials, 2009, 45 : 13 - 18
  • [45] Molecular beam epitaxy growth of iodide thin films
    蔡新强
    徐智临
    季帅华
    李娜
    陈曦
    Chinese Physics B, 2021, 30 (02) : 178 - 181
  • [46] Growth temperature dependence of SrTiO3 thin films by molecular beam epitaxy
    Bhuiyan, MNK
    Kimura, H
    Tambo, T
    Tatsuyama, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1B): : 677 - 680
  • [47] GROWTH AND STRUCTURE OF COPPER THIN-FILMS DEPOSITED ON (0001) SAPPHIRE BY MOLECULAR-BEAM EPITAXY
    DEHM, G
    RUHLE, M
    DING, G
    RAJ, R
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 71 (06): : 1111 - 1124
  • [48] Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates
    Chandrasekaran, R.
    Moustakas, T. D.
    Ozcan, A. S.
    Ludwig, K. F.
    Zhou, L.
    Smith, David J.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)
  • [49] Effect of growth temperature on the orientation of CdTe on GaAs prepared by molecular beam epitaxy
    Yin, JJ
    Huang, Q
    Zhou, JM
    Yin, JG
    THIN SOLID FILMS, 1997, 292 (1-2) : 303 - 306
  • [50] Molecular beam epitaxy growth and properties of Co2TiSi thin films on GaAs(001): the effect of growth temperature
    Dau, M. T.
    Herfort, J.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (02)
12345