Arsenic antisite defects in p -GaAs grown by metal-organic chemical-vapor deposition and the EL2 defect

被引：0

作者：

Naz, Nazir A. ^{[1
]}

Qurashi, Umar S. ^{[2
]}

Iqbal, M. Zafar ^{[2
]}

机构：

[1] Department of Applied Physics, Federal Urdu University of Arts Science and Technology, G-7/1 Islamabad, Pakistan

[2] Department of Physics, Semiconductor Physics Laboratory, Quaid-i-Azam University, Islamabad, 45320, Pakistan

来源：

Journal of Applied Physics | 2009年 / 106卷 / 10期

关键词：

Industrial chemicals - Organometallics - Electric fields - Energy gap - Organic chemicals - Temperature distribution - Defects - III-V semiconductors - Metallorganic chemical vapor deposition - Deep level transient spectroscopy - Gallium arsenide - Semiconducting gallium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

[21] ANTISITE-INTERSTITIAL-COMPLEX MODEL FOR THE EL2 DEFECT IN GAAS
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[22] GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition
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[23] GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition
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[24] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT
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[29] Monolayer epitaxy of GaAs at 650°C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring
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[30] BARRIER HEIGHT LOWERING OF SCHOTTKY CONTACTS ON ALINAS LAYERS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION
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