Arsenic antisite defects in p -GaAs grown by metal-organic chemical-vapor deposition and the EL2 defect

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作者：
Naz, Nazir A. [1 ]
Qurashi, Umar S. [2 ]
Iqbal, M. Zafar [2 ]
机构：
[1] Department of Applied Physics, Federal Urdu University of Arts Science and Technology, G-7/1 Islamabad, Pakistan
[2] Department of Physics, Semiconductor Physics Laboratory, Quaid-i-Azam University, Islamabad, 45320, Pakistan
来源：
Journal of Applied Physics | 2009年 / 106卷 / 10期
关键词：
Industrial chemicals - Organometallics - Electric fields - Energy gap - Organic chemicals - Temperature distribution - Defects - III-V semiconductors - Metallorganic chemical vapor deposition - Deep level transient spectroscopy - Gallium arsenide - Semiconducting gallium;
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Journal article (JA)
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