Effects of submonolayer Mg on CoFe-MgO-CoFe magnetic tunnel junctions

被引:0
|
作者
Huang, J.C.A. [1 ,2 ]
Hsu, C.Y. [1 ,2 ]
Chen, W.H. [1 ]
Lee, Y.H. [1 ]
Chen, S.F. [3 ]
Liu, C.P. [3 ]
Tzeng, Yonhua [2 ,4 ]
机构
[1] Physics Department, National Cheng Kung University, Tainan, 701, Taiwan
[2] Institute of Innovations and Advanced Studies (ILAS), National Cheng Kung University, Tainan, 701, Taiwan
[3] Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan
[4] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan
来源
Journal of Applied Physics | 2008年 / 104卷 / 07期
关键词
Magnesia;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
    Mizunuma, K.
    Ikeda, S.
    Park, J. H.
    Yamamoto, H.
    Gan, H.
    Miura, K.
    Hasegawa, H.
    Hayakawa, J.
    Matsukura, F.
    Ohno, H.
    APPLIED PHYSICS LETTERS, 2009, 95 (23)
  • [22] Magnon excitation of CoFe/Al-oxide/CoFe ferromagnetic tunnel junctions
    Murai, J
    Ando, Y
    Daibou, T
    Yaoita, K
    Han, HF
    Miyazaki, T
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 226 (PART I) : 922 - 923
  • [23] Enhanced magnetoresistance in naturally oxidized MgO-based magnetic tunnel junctions with ferromagnetic CoFe/CoFeB bilayers
    Schreiber, D. K.
    Choi, Y-S
    Liu, Yuzi
    Chiaramonti, Ann N.
    Seidman, David N.
    Petford-Long, A. K.
    APPLIED PHYSICS LETTERS, 2011, 98 (23)
  • [24] Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer
    Lee, S. Y.
    Rhee, J. R.
    JOURNAL OF THE KOREAN MAGNETICS SOCIETY, 2007, 17 (03): : 120 - 123
  • [25] Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer
    Kim, You Song
    Chun, Byong Sun
    Kim, Deok-kee
    Hwang, Jae Yeon
    Kim, Soon Sub
    Rhee, Jang Roh
    Kim, Keewon
    Kim, Taewan
    Kim, Young Keun
    IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (10) : 2649 - 2651
  • [26] Magnetotransport properties of CoFeB/MgO/CoFe/MgO/CoFeB double barrier magnetic tunnel junctions with large negative magnetoresistance at room temperature
    Jiang, L. X.
    Naganuma, H.
    Oogane, M.
    Fujiwara, K.
    Miyazaki, T.
    Sato, K.
    Konno, T. J.
    Mizukami, S.
    Ando, Y.
    INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009), 2010, 200
  • [27] High negative tunneling magnetoresistance in magnetic tunnel junctions with a ferrimagnetic CoFe-Gd electrode and a CoFe interface layer
    Kaiser, C
    Parkin, SSP
    APPLIED PHYSICS LETTERS, 2006, 88 (11)
  • [28] Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study
    Sankaran, K.
    Swerts, J.
    Couet, S.
    Stokbro, K.
    Pourtois, G.
    PHYSICAL REVIEW B, 2016, 94 (09)
  • [29] Tunneling behavior in ion-assist ion-beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions
    Singh, Braj Bhusan
    Chaudhary, Sujeet
    Pandya, Dinesh K.
    MATERIALS RESEARCH BULLETIN, 2012, 47 (11) : 3786 - 3790
  • [30] Improved thermal stability of ferromagnetic tunnel junctions with a CoFe/CoFeOX/CoFe pinned layer
    Ochiai, T
    Tezuka, N
    Inomata, K
    Sugimoto, S
    Saito, Y
    IEEE TRANSACTIONS ON MAGNETICS, 2003, 39 (05) : 2797 - 2799