Local strain distributions in silicon-on-insulator/stressor-film composites

被引:0
|
作者
Kalenci, Özgür [1 ]
Murray, Conal E. [2 ]
Noyan, I.C. [1 ]
机构
[1] Department of Applied Physics and Mathematics, Columbia University, New York, NY 10027, United States
[2] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, United States
来源
Journal of Applied Physics | 2008年 / 104卷 / 06期
关键词
15;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] NOVEL-APPROACH TO DEFECT ETCHING IN THIN-FILM SILICON-ON-INSULATOR
    GASSEL, H
    PETERWEIDEMANN, J
    VOGT, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (06) : 1713 - 1716
  • [42] Surface electrical conduction measurement of Si (100) film of Silicon-on-Insulator wafers
    Kamiyama, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7A): : 4322 - 4326
  • [43] Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain
    Di, ZF
    Zhang, M
    Liu, WL
    Lin, CL
    Chu, PK
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (4-6) : 393 - 397
  • [44] HIGH-PERFORMANCE THIN-FILM SILICON-ON-INSULATOR CMOS TRANSISTORS IN POROUS ANODIZED SILICON
    THOMAS, NJ
    DAVIS, JR
    KEEN, JM
    CASTLEDINE, JG
    BRUMHEAD, D
    GOULDING, M
    ALDERMAN, J
    FARR, JPG
    EARWAKER, LG
    LECUYER, J
    STIRLAND, IM
    COLE, JM
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) : 129 - 131
  • [45] Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator
    Moutanabbir, O.
    Reiche, M.
    Haehnel, A.
    Oehme, M.
    Kasper, E.
    APPLIED PHYSICS LETTERS, 2010, 97 (05)
  • [46] Coherent X-Ray Diffraction Imaging and Characterization of Strain in Silicon-on-Insulator Nanostructures
    Xiong, Gang
    Moutanabbir, Oussama
    Reiche, Manfred
    Harder, Ross
    Robinson, Ian
    ADVANCED MATERIALS, 2014, 26 (46) : 7747 - 7763
  • [47] Ultra-thin-film silicon-on-insulator structure fabricated by using oxidizing porous silicon technology
    Huang, Yiping
    Li, Aizhen
    Jiang, Meiping
    Zou, Sixun
    Li, Jinhua
    Zhu, Shiyang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (02): : 103 - 107
  • [48] Thermal behavior of residual strain in silicon-on-insulator bonded wafer and effects on electron mobility
    Iida, T
    Itoh, T
    Takano, Y
    Sandhu, A
    Shikama, K
    SOLID-STATE ELECTRONICS, 1999, 43 (06) : 1117 - 1120
  • [49] Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain
    Lauer, I
    Antoniadis, DA
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (05) : 314 - 316
  • [50] Nanoscale strain and band structure engineering using epitaxial stressors on ultrathin silicon-on-insulator
    Sutter, P
    Sutter, E
    Rugheimer, P
    Lagally, MG
    SURFACE SCIENCE, 2003, 532 : 789 - 794