AC response of AlN/GaN double-barrier resonant tunnelling diodes

被引：0
|
作者：
Farraj, Rabab Mohammad [1 ]
Ansari, Azhar A. [1 ]
Al-Hazmi, Farag S. [1 ]
机构：
[1] Department of Physics, Faculty of Science, King Abdulaziz University, PO Box 80203, Jeddah 21589, Saudi Arabia
来源：
International Journal of Nanomanufacturing | 2009年 / 4卷 / 1-4期
关键词：
D O I：
10.1504/IJNM.2009.028112
中图分类号：
学科分类号：
摘要：
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页码：69 / 76
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