Combined effect of total ionizing dose and electromagnetic pulse on MOSFET devices

被引：0

作者：

Wu, W. B. ^{[1
,3
]}

Zhou, H. J. ^{[1
,3
]}

Zhang, H. T. ^{[1
,3
]}

Liu, Y. ^{[1
,3
]}

Liu, Q. ^{[1
,3
]}

Xu, F. K. ^{[1
,3
]}

Zhao, Z. G. ^{[2
,3
]}

机构：

[1] Inst Appl Phys & Computat Math, 1 Fenghao East Rd, Beijing, Peoples R China

[2] CAEP Software Ctr High Performance Numer Simulat, 5 Huayun Rd, Beijing, Peoples R China

[3] Natl Interdisciplinary Res Ctr, 2 Xinghua Rd, Mianyang, Peoples R China

来源：

JOURNAL OF INSTRUMENTATION | 2024年 / 19卷 / 09期

关键词：

Models and simulations; Radiation damage to electronic components; RADIATION; SUSCEPTIBILITY; INTERFERENCE;

D O I：

10.1088/1748-0221/19/09/P09025

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Theoretical and experimental research on the combined effect of total ionizing dose (TID) and electromagnetic pulses (EMP) is helpful to develop hardening techniques for semiconductor devices. In this work, a numeric model for the comprehension of the combined effect of TID and EMP on MOSFET devices is developed with the semiconductor device simulation software TCAD. Simulation results show that the NMOS and PMOS devices will exhibit more severe leakage current increase and sub-threshold characteristics degradation in the combined environment. In addition, the potential influence of doping concentration and gate length on the performance of the MOSFET in the combined environment is discussed.

引用

页数：14

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