Fabrication and characteristics of a nano-polysilicon thin film pressure sensor

A nano-polysilicon thin film pressure sensor is presented. Nano-polysilicon thin film is fabricated by LPCVD at a substrate temperature of 620C, and then MEMS is adopted to fabricate four nano-polysilicon resistors with a film thickness of 63.0 nm and mixed boron, so that a Wheatstone bridge can be formed and additional pressure can be measured. The experimental results show that when the thickness of the squared silicon membrane is 75m and the constant voltage power supply of the nano-polysilicon thin film pressure sensor is 5.0V, the full range (160 kPa) output is 24.235 mV, the sensitivity is 0.151 mV/kPa, the precision is 0.59%F. S, and the coefficient of zero temperature and sensitivity temperature are -0.124 and -0.108%/°C, respectively.